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| SI7403BDN New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 FEATURES ID (A) -8c -7.4 rDS(on) (W) 0.074 @ VGS = -4.5 V 0.110 @ VGS = -2.5 V Qg (Typ) 5.6 5 6 nC D TrenchFETr Power MOSFET: 2.5-V Rated D RoHS Compliant D New PowerPAKr Package - Low Thermal Resistance - Low 1.07-mm Profile Product Is Completely Pb-free APPLICATIONS D Load Switching D PA Switching PowerPAK 1212-8 S 3.30 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 3.30 mm G D P-Channel MOSFET Bottom View Ordering Information: SI7403BDN-T1--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C)a, b TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Drain Diode Currenta, b Source-Drain TC = 25_C TA = 25_C TC = 25_C Maximum Power Dissipationa, b TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit -20 "8 -8c -7.2 -5.1a, b, -4.1a, b -20 -8 -2.6a, b 9.6 6.1 3.1a, b 2a, b -55 to 150 260 Unit V A W _C Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. t = 5 sec c. Package limited. d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73333 S-50519--Rev. A, 21-Mar-05 www.vishay.com 1 SI7403BDN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. Maximum under steady state conditions is 81 _C/W. t p 10 sec Steady State New Product Symbol RthJA RthJC Typical 32 11 Maximum 40 13 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Gate Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = -250 mA ID = -250 mA VDS = VGS, ID = -250 mA VDS = VGS, ID = -5 mA VDS = 0 V, VGS = -8 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55_C VDS v 5 V, VGS = -4.5 V VGS = -4.5 V, ID = -5.1 A VGS = -2.5 V, ID = -4.2 A VDS = -10 V, ID = -5.1 A -20 0.059 0.080 10 0.074 0.110 -0.45 -0.77 -100 -1 -10 -20 14 -2 -1.0 V mV/_C Symbol Test Condition Min Typ Max Unit V ns mA A W S Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = -10 V, RL = 2.4 W 10 ID ^ -4.1 A, VGEN = -8 V, Rg = 1 W VDD = -10 V, RL = 2.4 W 10 ID ^ -4.1 A, VGEN = -4.5 V, Rg = 1 W f = 1 MHz VDS = -10 V, VGS = -8 V, ID = -5.1 A VDS = -10 V, VGS = -4.5 V, ID= -5.1 A VDS = -10 V, VGS = 0 V, f = 1 MHz 430 85 55 9.7 5.6 0.95 1.4 10 5 51 33 60 4 40 30 40 10 75 50 90 8 60 45 60 ns W 15 8.5 nC pF www.vishay.com 2 Document Number: 73333 S-50519--Rev. A, 21-Mar-05 SI7403BDN New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Vishay Siliconix Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. IS ISM VSD trr Qrr ta tb IF = -4.1 A di/dt = 100 A/ms TJ = 25_C 4 1 A, A/ms, IS = -2.6 A, VGS = 0 V -0.7 20 8 12 8 TC = 25_C -8 -20 -1.2 40 16 A V ns nC ns Document Number: 73333 S-50519--Rev. A, 21-Mar-05 www.vishay.com 3 SI7403BDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3 V 10 TC = -55_C I D - Drain Current (A) 2.5 V 8 125_C 6 Transfer Characteristics I D - Drain Current (A) 16 12 2V 8 4 4 1.5 V 1V 2 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0.18 0.16 rDS(on) - On-Resistance (mW) On-Resistance vs. Drain Current and Gate Voltage 800 700 C - Capacitance (pF) 600 500 400 300 200 100 0 Crss 0 4 Capacitance 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 4 8 12 16 20 VGS = 2.5 V VGS = 4.5 V Ciss Coss 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 8 V GS - Gate-to-Source Voltage (V) 7 6 5 4 3 2 1 0 0 2 ID = 5.1 A Gate Charge 1.6 On-Resistance vs. Junction Temperature ID = 5.1 A VGS = 2.5 V 1.4 rDS(on) - On-Resiistance (Normalized) VGS = 4.5 V VDS = 10 V 1.2 VDS = 14 V 1.0 0.8 4 6 8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) www.vishay.com TJ - Junction Temperature (_C) Document Number: 73333 S-50519--Rev. A, 21-Mar-05 4 SI7403BDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage rDS(on) - Drain-to-Source On-Resistance (mW) 20 TJ = 150_C I S - Source Current (A) 10 TJ = 25_C 0.30 ID = 5.1 A 0.25 0.20 0.15 TA = 125_C 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TA = 25_C Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 1 0.0 Threshold Voltage 0.8 30 Single Pulse Power, Junction-to-Ambient 0.7 25 ID = 250 mA Power (W) 20 VGS(th) (V) 0.6 0.5 15 0.4 5 0.3 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Ambient *Limited by rDS(on) 10 I D - Drain Current (A) 100 us 1 1 ms 10 ms 100 ms 1s 10 s dc 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73333 S-50519--Rev. A, 21-Mar-05 www.vishay.com 5 SI7403BDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 12 10 Power Dissipation (W) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 Current De-Rating* 10 Power De-Rating 8 ID - Drain Current (A) 6 4 2 0 25 50 75 100 125 150 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73333 S-50519--Rev. A, 21-Mar-05 SI7403BDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1 Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73333. Document Number: 73333 S-50519--Rev. A, 21-Mar-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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